Basic characteristics:

• Supply voltage 2.7 - 3.63 V
• Static current consumption more than 15 mA per channel at U(cc)=3.3 V
• Dynamic current consumption not exceeding 20 mA at U(cc)=3.3 V and data transfer rate 150 Mbps
• Data transfer rate up to 150 Mbps
• Temperature range: -60°...+85°С (-76°...185° F)
• Signal types: CMOS, CMOS/TTL, LVDS/LVDM
• Cold standby for all inputs and outputs of LVDS/LVDM interfaces
• Insulation voltage 2000 V
• Signal propagation delay no more than 20 ns
• Radiation Hardened CMOS SOI Technology